Josephson inductance as a probe for highly ballistic semiconductor-superconductor weak links

We present simultaneous measurements of Josephson inductance and DC transport characteristics of ballistic Josephson junctions based upon an epitaxial Al-InAs heterostructure. The Josephson inductance at finite current bias directly reveals the current-phase relation. The proximity-induced gap, the critical current and the average value of the transparency $\bar{\tau}$ are extracted without need for phase bias, demonstrating, e.g., a near-unity value of $\bar{\tau}=0.94$. Our method allows us to probe the devices deeply in the non-dissipative regime, where ordinary transport measurements are featureless. In perpendicular magnetic field the junctions show a nearly perfect Fraunhofer pattern of the critical current, which is insensitive to the value of $\bar{\tau}$. In contrast, the signature of supercurrent interference in the inductance turns out to be extremely sensitive to $\bar{\tau}$.