In-plane selective area InSb–Al nanowire quantum networks

Strong spin–orbit semiconductor nanowires coupled to a superconductor are predicted to host Majorana zero modes. Exchange (braiding) operations of Majorana modes form the logical gates of a topological quantum computer and require a network of nanowires. Here, we utilize an in-plane selective area growth technique for InSb–Al semiconductor–superconductor nanowire networks. Transport channels, free from extended defects, in InSb nanowire networks are realized on insulating, but heavily mismatched InP (111)B substrates by full relaxation of the lattice mismatch at the nanowire/substrate interface and nucleation of a complete network from a single nucleation site by optimizing the surface diffusion length of the adatoms. Essential quantum transport phenomena for topological quantum computing are demonstrated in these structures including phase-coherence lengths exceeding several micrometers with Aharonov–Bohm oscillations up to five harmonics and a hard superconducting gap accompanied by 2e-periodic Coulomb oscillations with an Al-based Cooper pair island integrated in the nanowire network. Indium-Antimonide (InSb) possesses specific properties that makes it a suitable candidate for realizing Majorana-based topological quantum computers. The authors describe a method to fabricate single crystalline InSb nanowire networks from single nuclei enabling them to realize high-quality quantum transport in their devices.